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Specification :
Package : TO-247-3
Transistor Polarity : N
Maximum Drain Source Voltage : 200 V
Maximum Continuous Drain Current 50 A
Maximum Gate Source Voltage ±20V
Power Dissipation 300 W
Number of Elements per Chip 1
Maximum Forward Voltage 200VDC
Output Power 300W
Peak Non-Repetitive Surge Current 200A
Maximum Reverse Current 25uA
Channel Mode N-Channel Enhancement
Peak Reverse Recovery Time 48ns
Channel Type N
Repetitive Peak Reverse Voltage 200VDC
Configuration Single
Maximum Drain Source Resistance 0.04 Ohms@10V
Category Power MOSFET
Maximum Forward Current 50A
Typical Fall Time 48ns
Typical Gate Charge @ Vgs 234nC @10V
Typical Input Capacitance @ Vds 4057pF@25V
Typical Rise Time 60ns
Typical Turn-Off Delay Time 55ns
Typical Turn-On Delay Time 17ns
Minimum Operating Temperature -55°C
Maximum Operating Temperature 175°C
Mounting Through Hole
Packaging Bulk
Pins 3
Family IRFP260
Width 5.3mm
Height 20.3mm
Product Length 15.9mm
Product Type MOSFET
